12/24/2023 0 Comments Halo implant ion ioff gain roThe result shows that the VTH value has least variance and percent different from the target value (-0.289V) for this device is 3.11% (-0.280V). In p-channel device, VTH implant energy (57%) was identified as one of the control factor that has the strongest effect on the threshold voltage. The results were then subjected to the Taguchi method to determine the optimal process parameters and to produce predicted values. The fabrication of the transistor device was performed using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. used in this research are oxide growth temperature, VTH implant energy, Source/Drain (S/D) implant dose and compensation implant energy. An orthogonal array, signal-to noise (S/N) ratio and analysis of variance were employed to study the performance characteristics of the p-channel device. (VTH) in 32nm p-channel Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) device was investigated. In this paper, effect of the process parameters variation on response characteristics such as threshold voltage While the halo implant dose was identified as an adjustment factor to get the nominal values of VTH for NMOS device equal to 0.289V at tox= 1.06nm. In this research, S/D implant energy was identified as one of the process parameter that has the strongest effect on the response characteristics. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. VTH results were used as the evaluation variable. Whereas, the two noise factors were varied for 2 levels to get four readings of VTH for every row of experiment. In this paper, there are eight process parameters (control factors) were varied for 2 and. The orthogonal array, the signal-to-noise ratio, and analysis of variance are employed to study the performance characteristics of a device. In this paper, Taguchi method was used to analyze of input process parameters variations on threshold voltage (VTH) in 45nm n-channel Metal Oxide Semiconductor device. The Taguchi method will have a great potential application in biomechanical field when factors of the issues are at discrete level. The current case study illustrates that the strengths of the Taguchi method lie in (1) consistency in experimental design and analysis (2) reduction of time and cost of experiments (3) robustness of performance with removing the noise factors. The contribution of implant materials is found trivial. The results showed that a cage with larger width, depth and wall thickness can produce the lower von Mises stress under various conditions. Taguchi method was applied in the optimization of the cervical ring cage in material property and dimensions for producing the lowest stress on the endplate to reduce the risk of cage subsidence, as in the following steps: (1) establishment of objective function (2) determination of controllable factors and their levels (3) identification of uncontrollable factors and test conditions (4) design of Taguchi crossed array layout (5) execution of experiments according to trial conditions (6) analysis of results (7) determination of optimal run (8) confirmation of optimum run. A three-dimensional finite element (FE) model of C(5)-C(6) with a generic cervical ring cage inserted was modelled. The objective of the current study is to illustrate the procedures and strengths of the Taguchi method in biomechanical analysis by using a case study of a cervical ring cage optimization. The Taguchi method is a statistical approach to overcome the limitation of the factorial and fractional factorial experiments by simplifying and standardizing the fractional factorial design. In term of RF behaviors, the junctionless device exhibits 3.4% and 7% higher cut-off frequency (fT) and gain band-width product (GBW) respectively over the junction device. Junctionless device exhibits better analog behaviors as the transconductance (gm) is increased by approximately 4%. The result proves that the performance of n-channel junctionless double-gate vertical MOSFET (n-JLDGVM) is slightly better than the junction double-gate vertical MOSFET (n-JDGVM). In this paper, a process simulation has been performed to study the impact of junctionless configuration on the analog and RF behaviors of double-gate vertical MOSFET. Junctionless transistor configuration has been found to be an alternative device structure in which the junction and doping gradients could be totally eliminated, thus simplifying the fabrication process. The prime obstacle in continuing the transistor’s scaling is to maintain ultra-shallow source/drain (S/D) junctions with high doping concentration gradient, which definitely demands an advanced and complicated S/D and channel engineering.
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